PVD systems
CVD systems
HPPMS/MPP systems
  Surface analysis
 
 
 
PVD Systems
 
 

  Physical vapor deposition (PVD) has been proven to be an ideal coating process for surface engineering. compared to the chemical vapor deposition (CVD) process in several aspects. PVD can be carried out at lower deposition temperatures and without producing corrosive products. The substrate temperature in the PVD process is in the range of 150 to 500°C, thereby ensuring the metallurgical and dimensional characteristics of the coated part are not compromised. Besides the metal films, a range of desired compositional coatings (binary, ternary and higher oders) can be readily deposited using a composite target or by introducing a reactive gas (nitrogen, oxygen, or simple hydrocarbons) containing the desired reactants, that dissociate and ionize in the plasma to form reactive species (e.g. N,O,C). These reactive species react with metal atoms sputtered from the PVD source or target. PVD coatings usually exhibit fine grain size, dense structure and excellent properties. A wide range of PVD process and facilities have been developed and utilized in ACSEL, including the closed field unbalanced magnetron sputtering (CFUBMS), middle frequency pulsed dc magnetron sputtering (PMS), RF magnetron sputtering, balanced magnetron sputtering, high power pulse magnetron sputtering (HPPMS)/modulated pulse power (MPP) magnetron sputtering, E-beam evaporation, cathodic arc evaporation (CAE), conventional thermal evaporation. For the new advanced HPPMS/MPP deposition and power supply systems, please click here.

Four cathode closed field unbalanced magnetron sputtering system

(Four 5 x 12 inch2 unbalanced magnetrons, closed magnetic field, computer controled two-axis plantary substrate rotation system, IREES reactive gas control system, substrate heating, chamber heating/cooling, three gas manifolds with pressure control, cryo high vacuum pump; dc, PMS and MPP power supplies)

two cathode closed field unbalanced magnetron sputtering system

Two cathode closed field unbalanced magnetron sputtering system

(Two 5x12 inch2 unbalanced magnetrons, closed magnetic field, computer controled plantary substrate rotation system, IREES reactive gas control system, substrate heating, chamber heating/cooling, three gas manifolds with pressure control, cryo high vacuum pump; dc, PMS and MPP power supplies)

Three cathode unbalanced magnetron sputtering system

(Three 5 inch or 2.5 inch diameter unbalanced magnetrons, substrate heating, three gas manifolds with pressure control, Turbo high vacuum pump, dc, PMS and MPP power supplies)

Varian RF magnetron sputtering system

(Three 5 inch diameter unbalanced magnetrons, substrate rotation system, substrate heating, chamber heating, chamber lighting, three gas manifolds with pressure control, Cryo high vacuum pump; RF power system)

Horizental balanced magnetron sputtering system

(Three 6x14 inch2 balanced magnetrons, chamber heating, three gas manifolds with pressure control, Cryo high vacuum pump, RF and dc powers)

Varian E-beam evaporator

(An UHV evaporator, evaporation of almost every material possible, shutter, flux monitor, a wide range of crucibles)

E-beam evaporator

 

 
 
 
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